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Epitaxial g rowth and o ptical p roperties of ultra low density InAs quantum dots on patterned substrate by MBE

Y. MINGHUI1,* , S. QIXIANG1, L. SHIJUN1, L. JINGSHENG1

Affiliation

  1. I nformation Technology College , Jilin Agricultural University, Changchun 130033, China

Abstract

In this paper, we had investigated site control led and low density quantum dots (QDs) required communications band single photon source on the pattern ed substrate s by molecular beam epitaxy (There were st ill difficulties in isolating single QD s from the low density QD s assemble. In order to overcome such difficulty, growth of site control led QDs on pre patterned substrate s w ere proposed and preserve high material quality of the low density QDs for a real single photon, the In(Ga)As/GaAs QDs grown on the high reflectivity distributed bragg reflector mirror composed of a limited thickness of the wavelength of the micro cavity center. T he spectrum measured at 10K, and the wavelength was 1.3156μm, width only was 45μeV, respectively. The results show ed that the site controlle d and low density QDs growth technology would be prepared not only had high optical quality, but also for communications band 1.3μm single photon emission..

Keywords

Site-controlled, Low-density, Quantum dots, Single-photon, MBE.

Citation

Y. MINGHUI, S. QIXIANG, L. SHIJUN, L. JINGSHENG, Epitaxial g rowth and o ptical p roperties of ultra low density InAs quantum dots on patterned substrate by MBE, Optoelectronics and Advanced Materials - Rapid Communications, 9, 1-2, January-February 2015, pp.36-39 (2015).

Submitted at: Nov. 13, 2014

Accepted at: Jan. 21, 2015