Abstract
Quantum dots of CdS, embedded in Poly-Vinyl-Alcohol (PVA) capping layer is prepared using simple chemical method and
swift heavy ions (SHI) of Cu are used to irradiate the samples. The SHI irradiation dosages used are of 1×1011 and 3×1011
ions/cm2
. The unirradiated as well as the irradiated samples of CdS quantum dots are then characterized and tested for
Electroluminescence at room temperature, using a ZnO/CdS-QD device fabricated on FTO coated glass plate and
aluminum as the other electrode. The applied voltage is increased and the intensity of the electroluminescence is measured
and plotted for each device. For an applied voltage range from 2.5- 20V, the Electroluminescence increased from 220 a.u.
to 600 a.u. for first dose, and from 260 a.u. to 755 a.u. for 2nd dose of ion irradiation. Significant increase in
electroluminescence was observed due to irradiation of CdS quantum dots, and for a certain range of applied voltage the
intensity plot is almost linear.
Keywords
Quantum dots, Electroluminescence, SHI, CdS, Cu ions, Light-emitting device.
Citation
A. GANGULY, S. S. NATH, Enhancing electroluminescence in CdS quantum dots by swift heavy ion irradiation, Optoelectronics and Advanced Materials - Rapid Communications, 19, 7-8, July-August 2025, pp.344-349 (2025).
Submitted at: Jan. 11, 2025
Accepted at: Aug. 4, 2025