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L.S. CHUAH1,* , Z. HASSAN1, H. ABU HASSAN1
High quality unintentionally doped n-type GaN layers were grown on Si(111) substrate using high temperature AlN as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. Metal-semiconductor-metal (MSM) photodiode was fabricated assamples. For as grown GaN sample, this detector shows a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.258 A/W was achieved at 360 nm. For the porous GaN sample, this detector shows a sharp cut-off wavelength at 364 nm. A maximum responsivity of 0.771 A/W was achieved at 363 nm. MSM photodiode based on porous GaN shows enhanced (3x) magnitude of responsivity relative to as grown GaN MSM photodiodes. Enhancement of responsivity can be attributed to the relaxation of the compressive stress and reduction of surface pit density in the porous sample.
Porous GaN; Metal-semiconductor-metal (MSM) photodiode, Silicon, MBE, Responsivity.
L.S. CHUAH, Z. HASSAN, H. ABU HASSAN, Enhanced UV photodetector responsivity in porous GaN by Pt assisted electroless etching, Optoelectronics and Advanced Materials - Rapid Communications, 1, 8, August 2007, pp.400-403 (2007).
Submitted at: April 24, 2007
Accepted at: July 8, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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