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Enhanced responsivity of β-Ga2O3 ultraviolet photodetector using Pt/ITO stacked electrode

FENG LIN1, LEI YUAN1,* , HONGPENG ZHANG1, JIANGANG YU1, XIAOYAN TANG1, XIAOZHENG LIAN2, SHENGNAN ZHANG2, HONGJUAN CHENG2, JICHAO HU3, YIMEN ZHANG1, YUMING ZHANG1, RENXU JIA1

Affiliation

  1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi’an 710071, China
  2. China Electronics Technology Group Corporation No. 46 Research Institute, Tianjin 300220, China
  3. Department of Electronic Engineerin g, Xi’an University of Technology, Xi’an 710048, China

Abstract

In this paper, 10 nm Pt/90 nm ITO stacked electrode was employed to form the MSM structured β-Ga2O3 UV photodetectors, for comparison with the detectors using single 100 nm Pt electrodes. The optical response characteristics were mainly studied, and it w as found that the photocurrent and responsivity of the β-Ga2O3 detector using the Pt/ITO electrode is almost 1000 times that of the Pt electrode detector, which is due to the higher light transmittance of the Pt/ITO stacked layers. Th e results of the exper iment indicat e that the Pt/ITO stacked electrode is helpful for enhancing the performance of β-Ga2O3 UV photodetectors..

Keywords

Ga2O3, Solar blind UV detector, Optical responsivity, Light dark current ratio, Transient response.

Citation

FENG LIN, LEI YUAN, HONGPENG ZHANG, JIANGANG YU, XIAOYAN TANG, XIAOZHENG LIAN, SHENGNAN ZHANG, HONGJUAN CHENG, JICHAO HU, YIMEN ZHANG, YUMING ZHANG, RENXU JIA, Enhanced responsivity of β-Ga2O3 ultraviolet photodetector using Pt/ITO stacked electrode, Optoelectronics and Advanced Materials - Rapid Communications, 14, 11-12, November-December 2020, pp.494-500 (2020).

Submitted at: April 20, 2020

Accepted at: Nov. 25, 2020