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N. NANDA KUMAR REDDY1, V. RAJAGOPAL REDDY1,*
We have investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Au/Pt/n-InP Schottky barrier diodes (SBDs) in the temperature range of 210-420 K in steps of 30 K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that Φbo decreases and n and C−V Φ increases with decreasing temperature. The decrease in the zero bias barrier height Φbo and an increase in the ideality factor ‘n’ with decrease in temperature have been explained on the basis of thermionic emission mechanism with Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal-semiconductor interface. The zero bias barrier height Φbo versus ½ kT plot shows the evidence of Gaussian distribution of the barrier heights. The values of Φb0 =0.78eV and 0 σ =0.121 eV for the mean barrier height and zero bias standard deviation are obtained from this plot. The modified Richardson plot, according to inhomogeneity of BHs, has a good linearity over the temperature range. The effective Richardson constant A* is found to be 8.09 AK-2cm-2, which is close to the theoretical value of 9.4 A K-2cm-2. The series resistance is also calculated from the forward I-V characteristics of Pt/Au SBD and found that it is strongly dependent on temperature. It is observed that the series resistance decreases with increase in temperature. As a result, it can be concluded that the temperature dependent electrical parameters for Au/Pt/n-InP SBDs can be successfully explained based on thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights.
Temperature-dependent electrical properties, Pt/Au Schottky Contacts, Indium phosphide.
N. NANDA KUMAR REDDY, V. RAJAGOPAL REDDY, Electrical transport parameters of Pt/Au Schottky contacts on n-type InP in a wide temperature range, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1229-1238 (2010).
Submitted at: July 31, 2010
Accepted at: Aug. 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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