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V. JANARDHANAM1,* , A. ASHOK KUMAR1, V. RAJAGOPAL REDDY1, P. NARASIMHA REDDY1
The current-voltage (I-V) characteristics of Ru/n-InP Schottky diodes were measured in the temperature range 200 – 400 K. The I-V curves fitted by the equation based on thermionic emission theory has revealed decrease of zero-bias barrier height and increase of ideality factor with decreasing temperature. This behavior has been interpreted by the assumption of Gaussian distribution of barrier heights due to barrier inhomogeneities that prevail at the metal-semiconductor interface. AΦb0 versus q/2kT plot was drawn to obtain evidence of Gaussian distribution of barrier heights yielded values of b0 − Φ = 0.79 eV for mean barrier height and σ 0 =0.122 eV for standard deviation at zero-bias. The modified Richardson plot gives b0 − Φ (T=0)=0.81 eV and A**=5.73 A K-2 cm-2. It can be concluded that the temperature dependence of I-V characteristics of the Schottky barrier on n-InP can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.
Schottky diodes, Indium phosphide, I-V characteristics, Barrier height, Ideality Factor, Series resistance.
V. JANARDHANAM, A. ASHOK KUMAR, V. RAJAGOPAL REDDY, P. NARASIMHA REDDY, Electrical transport characteristics of ruthenium/n-InP Schottky diodes from current-voltage-temperature (I-V-T) measurements, Optoelectronics and Advanced Materials - Rapid Communications, 2, 11, November 2008, pp.735-742 (2008).
Submitted at: Sept. 1, 2008
Accepted at: Oct. 30, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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