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M. OZER1,* , S. K. AKAY1, A. PEKSOZ1, K. ERTURK2, G. KAYNAK1
This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.
Electro-deposition, Schottky barrier height, Scanning electron microscopy, Morphological propert.
M. OZER, S. K. AKAY, A. PEKSOZ, K. ERTURK, G. KAYNAK, Electrical, structural and morphological properties of Ni/n-Si contacts, Optoelectronics and Advanced Materials - Rapid Communications, 3, 5, May 2009, pp.506-508 (2009).
Submitted at: May 20, 2009
Accepted at: May 25, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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