Electrical properties of TCNQ/V2O5 heterojunction
                
                        
                        M. H. SAYYAD1,*
                            ,
                        
                        KH. S. KARIMOV1,2,
                        
                        K. UL HASAN1,
                        
                        A. ELAHI1,
                        
                        M. SALEEM1,
                        
                        KH. M. AKHMEDOV2,
                        
                        Z. M. KARIEVA3
                        
                    
                    Affiliation
                    
                        
                        - GIK Institute of Engineering Sciences and Technology, Topi, N.W.F.P., 23460, Pakistan
 
                        
                        - Physical Technical Institute of Academy of Sciences, Dushanbe, 734025, Tajikistan
 
                        
                        - Tajik Technical University, Dushanbe, 734000, Tajikistan
 
                        
                    
                     
        
        Abstract
        In this study the electrical properties of tetracyanoquinodimethane (TCNQ) and vanadium pentoxide 2 5 ( ) V O structured 
composite were evaluated. The composite was formed by drop deposition of TCNQ film from solution in benzol on 
preliminary deposited V O2 5 layer from its suspension in distilled water on Cu substrate. The sandwich Cu/V2O5/TCNQ/Ga 
and the surface Cu/V2O5/TCNQ/Cu type samples were fabricated. Resistance-temperature relationships and voltagecurrent characteristics of the composite samples were measured by using conventional digital voltmeter and ammeter at the 
temperature interval of 24 o
C – 102 o
C with an error of ± 0.5 %. It is observed that the DC electrical conductivity, nonlinearity of voltage-current characteristics of the samples and activation energy for the surface type samples are 
temperature dependent. The surface type samples show quasi-linear resistance-temperature relationship, the temperature 
coefficient of resistance is sufficiently large and at 24 o
C is equal to – 2.4 / o
C and non-linearity coefficient of V-I 
characteristics is low (1.4), whereas the sandwich type samples exhibit non-linear resistance-temperature relationship, 
higher non-linearity coefficient (2.3) of V-I characteristics, lower temperature coefficient of resistance (-2.1 / o
C ). Sandwich 
type samples show small rectification behaviour, rectification ratio unlike to conventional semiconductors increases with 
temperature.
        Keywords
        Organic semiconductor, Low molecular material, Tetracyanoquinodimethane, Vanadium pentoxide, Composite.
        Citation
        M. H. SAYYAD, KH. S. KARIMOV, K. UL HASAN, A. ELAHI, M. SALEEM, KH. M. AKHMEDOV, Z. M. KARIEVA, Electrical properties of TCNQ/V2O5 heterojunction, Optoelectronics and Advanced Materials - Rapid Communications, 2, 3, March 2008, pp.170-175 (2008).
        Submitted at: Sept. 24, 2007
 
        Accepted at: March 16, 2008