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MUHITDIN AHMETOGLU1,* , BANU KUCUR1, ISMET GÜCÜYENER2
The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased..
Light emitting diode, Avalanche breakdown, I-V characteristics.
MUHITDIN AHMETOGLU, BANU KUCUR, ISMET GÜCÜYENER, Electrical properties of GaAs-GaAlAs near infrared light emitting diodes, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.782-784 (2012).
Submitted at: April 4, 2012
Accepted at: Sept. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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