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F. YAKUPHANOGLU1,2,* , W. A. FAROOQ2
Photovoltaic and electronic properties of p-Si/C60 device have been investigated by current-voltage and capacitance-voltage methods. The ideality factor n and barrier height B values of the p-n junction were found to be 2.92 and 0.83 eV respectively. Current-voltage characteristic of the device indicates a non-ideal behavior due to ideality factor higher than unity. Capacitance-voltage characteristic of the device indicate an abrupt junction behavior. Electrical characterization results confirms that p-Si/C60 device is an photodiode with the calculated electronic parameters, maximum open circuit voltage Voc of 150 mV and short-circuit current Isc of 12.1 nA..
Photodiode, Organic semiconductor, Fullerene-C60.
F. YAKUPHANOGLU, W. A. FAROOQ, Electrical characterization of p-Si/fullerene-C60 heterojunction photodiode, Optoelectronics and Advanced Materials - Rapid Communications, 5, 2, February 2011, pp.153-156 (2011).
Submitted at: Jan. 24, 2011
Accepted at: Feb. 17, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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