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S. EL-SAYED1,*
Electrical conductivity, I-V characteristics and thermoelectric power are investigated for Cd23Se43S34 film sample as a function of temperature and thickness. D.C conductivity increases with temperature, while it increases with increasing film thickness. The obtained results showed that the conduction activation energy has two values σ1 ΔE and σ 2 ΔE indicating the presence of two different conduction mechanisms through the investigated range of temperature (327-400K). The thermopower (TEP) measurements carried out using differential dc method in the temperature range (322-370K) and the activation energy (ΔEs) for TEP determined. Positive thermoelectric power suggests a large predominance of holes in electrical transport. The I-V characteristics of films are typical for a memory switch. The mean value of the threshold voltage Vth decreases with increasing temperature and increases with increasing film thickness. The switching voltage activation energy (ε) was determined. Agreement between the obtained value of ratio (ε/σ 2 ΔE ) with its values obtained theoretically on the basis of an electrothermal model was found..
Electrical conductivity; thermoelectric power; I-V characteristics; Cd23Se43S34 film, Chalcogenide.
S. EL-SAYED, Electrical and thermoelectric power properties of Cd23Se43S34, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.313-317 (2010).
Submitted at: Feb. 10, 2010
Accepted at: March 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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