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HOGYOUNG KIM1,*
The effect of interfaces states in Ag Schottky contacts on Zn-polar and O-polar bulk ZnO was investigated using current– voltage (I–V) measurements. Compared with Zn-polar ZnO, the barrier height was higher and the series resistance was lower for O-polar ZnO. The ideality factor versus voltage plot showed a peak for Zn-polar ZnO, which was associated with an interface state effect. The interface state density, calculated from I–V characteristics, was higher for Zn-polar ZnO. The results suggested that the hydrogen-related defects in Zn-polar ZnO were attributed to the high density of interface states..
Hydrogen-related defects, Interface states, Series resistance.
HOGYOUNG KIM, Electrical and interfacial properties of Ag/bulk ZnO Schottky diodes, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.956-960 (2013).
Submitted at: July 2, 2013
Accepted at: Nov. 7, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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