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P. K. JAIN1,* , N. JAIN2, N. S. SAXENA3
Se90In10-xSbx (x=0, 2, 4, 6, 8 &10) chalcogenide glasses were prepared by well established melt quenching technique. The glassy nature was verified by X-ray diffraction (XRD). Electrical conductivity of Se90In10-xSbx (x=0, 2, 4, 6, 8, 10) glassy systems at different temperature has been studied in bulk form through I-V characteristic curves. The dielectric properties of glassy systems at room temperature 300K to 350K and over a wide range of frequencies (50Hz to 500 kHz) have been studied. The dielectric constant (ε’) and loss constant (ε”) showed frequency, temperature and Sb content dependence. The activation energies E ε’ belonging to the dielectric constant is found to be affected by both the applied frequency and the Sb content. Analysis of result on the basis of the correlated barrier hopping (CBH) model reveals that the electronic conduction in Se-In-Sb glasses takes place via bipolaron hopping.
Chalcogenide glass, Se-In-Sb, Dielectric constant, Loss constant activation energy.
P. K. JAIN, N. JAIN, N. S. SAXENA, Electrical and dielectric properties of Se-In-Sb chalcogenide glasses, Optoelectronics and Advanced Materials - Rapid Communications, 3, 2, February 2009, pp.110-115 (2009).
Submitted at: Jan. 24, 2009
Accepted at: Feb. 13, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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