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Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness

M. GÖKÇEN1,* , H. ALTUNTAŞ1, Ş. ALTINDAL1

Affiliation

  1. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey

Abstract

The electrical and dielectric characteristics as series resistance (Rs), dielectric constant (ε∋), dielectric loss (ε∀) and dielectric loss tangent (tanδ) of the Au/SiO2/n-GaAs (MOS) structures with different oxide thickness have been investigated in room temperature at 1 MHz. Applied voltage and oxide thickness dependence of these structure investigated by using experimental capacitance (C) and conductance (G/w) measurements in the applied voltage (-3 to 1,5 V) and oxide thickness (130-240 Å) range. Experimental results show that, while the capacitance values decrease with increasing oxide layer thickness, series resistance values increases. Also the change in Gm/w curves with interfacial oxide layer thickness is slight. While the capacitance values decrease parabolic with increasing interfacial oxide layer thickness the series resistance values increase linearly. The ε∋ values decreases rapidly at above 1 V, ε∀ and tanδ decreases rapidly.

Keywords

MOS structures, Series resistance, Electrical properties, Dielectric properties, Oxide thickness.

Citation

M. GÖKÇEN, H. ALTUNTAŞ, Ş. ALTINDAL, Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.833-837 (2008).

Submitted at: Nov. 4, 2008

Accepted at: Dec. 4, 2008