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Effects of thermal annealing on electrical and structural characteristics of Pd/n-GaN Schottky diode

K. JAGADESWARA REDDY1, V. RAJAGOPAL REDDY2, P. NARASIMHA REDDY1,* , K. S. R. KOTESWARA RAO3

Affiliation

  1. Department of Physics, S.V.University, Tirupati-517 502, India
  2. Department of Electronics, University of Mysore, Post-Graduate Centre, Hemagangotri –573 220, Hassan, India
  3. Department of Physics, Indian Institute of Science, Bangalore 560 012, India

Abstract

We report on the influence of annealing on the electrical and structural properties of Pd/n-GaN Schottky diode by currentvoltage (I-V), capacitance-voltage (C-V), X-Ray diffraction (XRD) and Auger electron spectroscopy (AES) measurements. The Schottky barrier height of the as-deposited Pd/n-GaN was found to be 0.80 eV (I-V) and 1.32 eV (C-V). However, both measurements indicate that the barrier height slightly increases to 0.87 eV (I-V) and 1.44 eV (C-V) upon annealing at 300 °C for 1 min in nitrogen gas. After annealing at 400 °C, the Schottky barrier height slightly decreases to 0.79 eV (I-V) and 1.42 eV (C-V). Further, with an increase in annealing temperature up to 500 °C; the barrier height is decreased to 0.74 eV (I-V) and 1.33 eV (C-V). Based on the Auger electron microscopy and X-ray diffraction results, the formation of gallide phases at the Pd/n-GaN interface could be the reason for the improvement of electrical properties of Schottky contact upon annealing at 300 °C.

Keywords

Electrical and structural properties, Pd/n-GaN Schottky diode, Auger electron microscopy, X-ray diffraction.

Citation

K. JAGADESWARA REDDY, V. RAJAGOPAL REDDY, P. NARASIMHA REDDY, K. S. R. KOTESWARA RAO, Effects of thermal annealing on electrical and structural characteristics of Pd/n-GaN Schottky diode, Optoelectronics and Advanced Materials - Rapid Communications, 1, 3, March 2007, pp.91-95 (2007).

Submitted at: Feb. 2, 2007

Accepted at: Feb. 14, 2007