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ZIYANG ZHANG1,2, JIE XING1,* , BIN HE2, JIAN CAO2, YANTING DUAN2, ZHIYUAN ZHENG1, ZILI ZHANG1
Conductive films of perovskite LaNiO3 (LNO) were grown on LaAlO3 (LAO) and silica using radio frequency sputtering. Effects of process parameters such as annealing condition, deposition atmosphere, deposition temperature and sputtering time on the microstructure and conductive properties were investigated. Experimental analysis showed the microstructure and conductive properties of films were improved after annealing. A mixture of O2 and Ar with ratio of 1:6 was the optimal atmosphere. It was found that the temperature to achieve minimum resistivity was 200 °C when LNO film was deposited on LAO substrate. A semiconductive property was found when sputtering time decreased down to 5 minutes. LNO films with resistivity of 3.9×10-4 Ω·cm was fabricated, which provided optimum electrodes for the subsequent epitaxial growth of ferroelectric thin films..
LaNiO3 thin films, Microstructure, Conductive properties.
ZIYANG ZHANG, JIE XING, BIN HE, JIAN CAO, YANTING DUAN, ZHIYUAN ZHENG, ZILI ZHANG, Effects of process parameters on the microstructure and conductive properties of LaNiO3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 7, 3-4, March-April 2013, pp.201-206 (2013).
Submitted at: Nov. 15, 2012
Accepted at: April 11, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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