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Effects of growth pressure on point defects in unintentionally doped 4H SiC epitaxial layers

JICHAO HU1,1,2, SUZHEN LUAN1,* , RENXU JIA1, BO PENG1, YUTIAN WANG1, YUEHU WANG1, YUMING ZHANG1

Affiliation

  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, PR China
  2. Faculty of Automation and Information Engineering, Xi’an University of Technology, No. 5 South Jinhua Road, Xi’an 7100 48 PR China

Abstract

U nintentionally doped 4H SiC (0001) epilayers were performed on 4°off axis substrates under varied pressures condition by CVD. It has been founded that t he main point defects in 4H SiC epitaxial layers performed under varied pressures are carbon vacanc y and related complexes. A magnetic method is employed to precisely calculate the concentration of point defects in specimen. The concentration of carbon vacancy has been reduced from 2.17 ×10 1 7 g 1 to 8.69 ×10 1 6 g 1 with reduced growth pressure. Reduction of carbon vacanc y in epila yers by decreasing the growth pressure is demonstrated. The reduction mechanism of the carbon vacanc ies is discussed..

Keywords

Epitaxial growth, Point d efects, BBrillouin function fitting.

Citation

JICHAO HU, SUZHEN LUAN, RENXU JIA, BO PENG, YUTIAN WANG, YUEHU WANG, YUMING ZHANG, Effects of growth pressure on point defects in unintentionally doped 4H SiC epitaxial layers, Optoelectronics and Advanced Materials - Rapid Communications, 12, 1-2, January-February 2018, pp.86-89 (2018).

Submitted at: Feb. 10, 2017

Accepted at: Feb. 12, 2018