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S. RAQEEB1, Y. KARAKUS1,*
In this work CZTS thin films with different layers were coated on n-type Si substrate kept at 350 C using the spray pyrolysis technique. FESEM results showed a crack-free and smooth surface. XRD results proved that all samples had a polycrystalline tetragonal type kesterite phase. Raman spectrum of the samples also confirmed the kesterite structures. The electrical measurements showed that all CZTS films had a p-type character with high absorption coefficient of 105 cm- 1 and ideal band gap energy (1.52 eV). The effect of film thickness and annealing on the mobility of charged particles and the crystallinity was studied. An increase of more than one order of magnitude was observed in the mobility after increasing the thickness of the film. As the thickness increased from 0.15 μm to 11.6 μm, the mobility increased from 1.33 cm2 V -1 S -1 to 30.5 cm2 V -1 S -1 . A significant enhancement was observed in XRD peaks through annealing. An increase of 30% was obtained in the XRD peak even at 150 C. To our knowledge, this is the first time the effect of annealing at such low temperatures has been reported.
Spray pyrolysis, Annealing, XRD, Raman, UV-vis spectrum.
S. RAQEEB, Y. KARAKUS, Effect of thickness and annealing on mobility and crystallinity of CZTS films, Optoelectronics and Advanced Materials - Rapid Communications, 17, 11-12, November-December 2023, pp.551-556 (2023).
Submitted at: May 31, 2023
Accepted at: Dec. 4, 2023
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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