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V. I. MIKLA1,* , V.V. MIKLA2
Structural changes induced by light and heat treatment in vacuum deposited amorphous chalcogenide films prepared by thermal evaporation methods with different rates have been investigated using Raman scattering. The changes in the Raman spectra of thermally evaporated amorphous As2S3 films after light treatment are interpreted in terms of rearrangement of bonding configurations of molecular species that exist just after evaporation. As the evaporation temperature or deposition rate is increased, irradiation with band-gap light, arsenic-enrichment and/or even more annealing of the films induces the formation of microcrystallites. The reversible photo-induced changes in annealed films involve negligible small change in bonding statistics. Discernable change occurs in the medium-range order.
Amorphous chalcogenides, Raman scattering, Structural transformations, Photoinduced effects.
V. I. MIKLA, V.V. MIKLA, Effect of thermal evaporation conditions on structural changes in amorphous AsxS1-x films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 6, June 2007, pp.272-276 (2007).
Submitted at: Dec. 13, 2006
Accepted at: April 25, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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