"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Effect of the growth temp e r a ture on the surface characterization of β FeSi 2 films prepared by pulsed laser deposition

SHOUZHEN JIANG1, SHICAI XU1, CHUANCHAO WANG1, JINJIN GUO1, BAOYUAN MAN1,* , SHANPENG WANG2

Affiliation

  1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China
  2. State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, P.R. China

Abstract

The β FeSi 2 films were successfully fabricated by pulse laser deposition on silicon (100) in a wide range of growth temperature The crystalline structures of the films were measured by using X ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). It shows that crystalline quality of the films has improved with the increase of the growth temperature and t he (331 orientated mo n ocrystal β FeSi 2 film s are obtained at the growth temperature of 800 oC The surface properties of the films were characterized with scanning electron microscopy (SEM) The smooth surface of the films was acquired at 750 oC 800 oC. It is found that both th e crystal orientation and surface morphology of the β FeSi 2 films were associated with growth temperature..

Keywords

Pulse laser deposition,Growth temperature β FeSi 2.

Citation

SHOUZHEN JIANG, SHICAI XU, CHUANCHAO WANG, JINJIN GUO, BAOYUAN MAN, SHANPENG WANG, Effect of the growth temp e r a ture on the surface characterization of β FeSi 2 films prepared by pulsed laser deposition, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.58-61 (2012).

Submitted at: Dec. 12, 2011

Accepted at: Feb. 20, 2012