"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Effect of target composition on the growth of stoichiometric LiCoO2, LiTixCo1-xO2 and LiNixCo1-xO2 thin films

M. C. RAO1,*

Affiliation

  1. Department of Physics, Andhra Loyola College, Vijayawada – 520008, India

Abstract

Thin films of LiCoO2, LiTixCo1-xO2 and LiNixCo1-xO2 were prepared by pulsed laser deposition technique. Two important deposition parameters such as substrate temperature and oxygen partial pressure during the thin film deposition were controlled. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The binding energy peaks of Co(2p3/2) and Co(2p1/2) are observed at 779.3 eV and 794.4 eV which can be attributed to the Co3+ bonding state of LiCoO2. The energy separation (ΔE) of the spin orbit splitting of Cobalt 2p levels is 15.1 eV. The core level binding energy peak positions observed from XPS data and the estimated Li/Co ratio of the LiCoO2 films deposited in an oxygen partial pressure of 100 mTorr and at different substrate temperatures indicated that the films are nearly stoichiometric. The LiTixCo1-xO2 and LiNixCo1-xO2 films prepared in the substrate temperature range 500-700 0C were found to be nearly stoichiometric..

Keywords

LiCoO2, LiTixCo1-xO2 and LiNixCo1-xO2 thin films, PLD, XPS and RBS.

Citation

M. C. RAO, Effect of target composition on the growth of stoichiometric LiCoO2, LiTixCo1-xO2 and LiNixCo1-xO2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 6, June 2011, pp.651-654 (2011).

Submitted at: Jan. 24, 2011

Accepted at: June 9, 2011