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LI DUAN1,* , XIAOCHEN YU1, LEI GOU1, LEI NI1
p-type ZnO:Ag (SZO) films were deposited on Si (100) and glass substrates using RF magnetron sputtering. We observed the hole concentration and the solid solubility of Ag in SZO on Si are both higher than those in SZO on glass. Secondary ion mass spectroscopy (SIMS) measurement indicates the improvements were likely to be attributed to the lattice mismatch between Si and SZO. Furthermore, current-voltage (I-V) measurement shows the electrical characteristic of ZnO/SZO homojunction prepared on Si substrate is influenced by the deposition sequence. These results imply Si is a promising substrate material for SZO-based optoelectronic devices.
ZnO, Ag doping, P-type, Si substrate.
LI DUAN, XIAOCHEN YU, LEI GOU, LEI NI, Effect of Si substrate on the properties of p-type ZnO:Ag films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1608-1611 (2010).
Submitted at: Aug. 21, 2010
Accepted at: Oct. 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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