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Effect of recaesiation on quantum efficiency recovery for GaN photocathodes

LINGAI SU1, YANG SHEN1, LIANG CHEN1,2,* , YUNSHENG QIAN2, SUNAN XU1, SHUQIN ZHANG1

Affiliation

  1. Institute of Optoelectronics Technology, China Jiliang University, 310018, Hangzhou, China
  2. Institute of Electronic Engineering & Optoelectronics Technology, Nanjing University of Science and Technology, 210094, Nanjing, China

Abstract

Using the first-principles plane-wave pseudo-potential method based on density functional theory (DFT), the work function and band structure of five different (1×1) GaN (0001) surface models are calculated in this paper. To investigate the recovery status of the quantum efficiency (QE) of reflection-mode NEA GaN photocathode, the QE curves have been studied after the photocathode was fully activated, stored in system and supplement with Cs. The results show that there is a good recovery on the overall curve, the short wavelengths below 300nm recover better, and those long ones excess 300nm can also recover up to 88% after supplement with Cs. Our calculation results are well consistent with the experimental analysis, indicating the explanation is proper and instructive.

Keywords

Quantum efficiency, Negative electron affinity (NEA), Reflection-mode, GaN photocathode, Recovery status.

Citation

LINGAI SU, YANG SHEN, LIANG CHEN, YUNSHENG QIAN, SUNAN XU, SHUQIN ZHANG, Effect of recaesiation on quantum efficiency recovery for GaN photocathodes, Optoelectronics and Advanced Materials - Rapid Communications, 10, 11-12, November–December 2016, pp.907-911 (2016).

Submitted at: June 3, 2015

Accepted at: Nov. 25, 2016