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Effect of precursor molarity on physical properties of In2O3 films

P. PRATHAP1, Y. P. V. SUBBAIAH1, K. T. RAMAKRISHNA REDDY1,*

Affiliation

  1. Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India

Abstract

In2O3 thin films have been deposited on glass substrates by spray pyrolysis using InCl3 as the precursor. The effect of precursor concentration that varied in the range, 0.01-0.25 M on the physical properties of sprayed In2O3 films deposited at 400 oC was investigated. The structural properties of the as-deposited films were studied using X-ray diffractometer and Atomic force microscope. The XRD analysis indicated that the layers had cubic structure with (222)/(400) as the preferred orientation. The AFM studies revealed a decrease of grain size at higher precursor concentrations with an increase of surface roughness. The layers were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index, extinction coefficient and other optical parameters. An average visible transmittance of ~ 90 % was observed with an optical band gap of 3.62 eV for the layers grown at a solution concentration of 0.1 M. The Hall effect measurements revealed that the films deposited at a solution concentration, 0.1 M exhibit a minimum resistivity of 2.72x10-3 Ωcm with the carrier concentration and mobility of the order of 7.6x1019 cm-3 and 30.2 cm2/Vs respectively. The layers showed the highest figure of merit of 8.2x10-3 Ω-1.

Keywords

In2O3 films, Spray pyrolysis, Optical parameters.

Citation

P. PRATHAP, Y. P. V. SUBBAIAH, K. T. RAMAKRISHNA REDDY, Effect of precursor molarity on physical properties of In2O3 films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 5, May 2007, pp.252-560 (2007).

Submitted at: Dec. 11, 2006

Accepted at: April 5, 2007