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Effect of phase transition on the structure and optical properties of chalcogenide nanostructured thin films

A. I. KHUDIAR1,2,* , M. ZULFEQUAR1, Z. H. KHAN1

Affiliation

  1. Department of Physics, Jamia Millia Islamia (Central University), New Delhi-110025, India
  2. Center of Laser and Optoelectronics, Ministry of Science and Technology, Baghdad, Iraq

Abstract

The optical and structural properties of Nanocrystalline thin films of CdxSe100-x (x=54, 34) and CdSe powder are studied. The films are deposited by the vacuum evaporation technique on ultra cleaned glass substratesat room temperature. Thin film was characterized through the XRD, and it is found to be polycrystalline in nature, having preferred orientation along (002) plane. The grain sizes of the films are calculated from XRD data. Absorption spectra of the thin films are recorded using a UV-VIS-IR spectrophotometer, and determined the band gap; it is found that the band gap of CdxSe100-x films varies between 1.69 to 2.2 eV..

Keywords

Cadmium Selenide, Thermal evaporation, Optical properties, Structure properties.

Citation

A. I. KHUDIAR, M. ZULFEQUAR, Z. H. KHAN, Effect of phase transition on the structure and optical properties of chalcogenide nanostructured thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1578-1581 (2010).

Submitted at: May 18, 2010

Accepted at: Oct. 14, 2010