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Effect of bismuth addition on the optical band gap and extinction coefficient of thermally evaporated As-Se-Ge thin films

PANKAJ SHARMA1,* , VINEET SHARMA1, P. B. BARMAN1, S. C. KATYAL2

Affiliation

  1. Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan -173234, India
  2. Department of Physics, Jaypee Institute of Information Technology, Sec 128, Noida, U.P.

Abstract

Chalcogenide glasses have shown potential application in non-linear optics along with IR applications. In present work, effect of bismuth (Bi) addition on the extinction coefficient (k) and optical band gap (opt g E ) of (As2Se3)90Ge10 thin films has been investigated. A single transmission spectrum has been used for the determination of k and opt g E . The opt g E decreases while k increases with Bi addition. Results have been explained on the basis of change in density of states at band gap edges and localized states..

Keywords

Chalcogenide glasses, Extinction coefficient, Optical band gap.

Citation

PANKAJ SHARMA, VINEET SHARMA, P. B. BARMAN, S. C. KATYAL, Effect of bismuth addition on the optical band gap and extinction coefficient of thermally evaporated As-Se-Ge thin films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.804-806 (2012).

Submitted at: April 3, 2012

Accepted at: Sept. 20, 2012