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A. U. UBALE1,* , T. B. GHUGARE1, V. P. DESHPANDE1, S. G. IBRAHIM1, A. V. MITKARI1, S. K. KADAM1
Sb2S3 thin films were deposited onto glass substrates at room temperature by chemical bath deposition method and annealed at 473 K temperature in air. The films were characterized for structural, surface morphological, optical and electrical properties. The X-ray diffraction analysis of the annealed film and precipitated powder showed that the deposited material is polycrystalline in nature with orthorhombic structure. The optical studies showed decrease in band-gap by 0.15 eV after annealing. The photoconductivity measurements revealed that the films were photoconducting in nature and the photoconducting character of the film increases after annealing..
Nanostructures, Thin films, Chemical synthesis, Electrical properties, Optical properties.
A. U. UBALE, T. B. GHUGARE, V. P. DESHPANDE, S. G. IBRAHIM, A. V. MITKARI, S. K. KADAM, Effect of annealing on the structural, electrical and optical properties of chemically deposited nanostructured Sb2S3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 7, 3-4, March-April 2013, pp.219-224 (2013).
Submitted at: Sept. 17, 2012
Accepted at: April 11, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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