Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
P. BHARATHI1,* , A. SUBBARAYAN1
Indium telluride thin films of higher thickness were prepared by thermal evaporation technique and the as-deposited films were annealed in a vacuum at different temperature. The influence on structure and electrical properties were characterized by X-ray diffraction (XRD) and resistivity measurements. From the structural analysis, the as-deposited In2Te3 films which were annealed at 423K and 573K respectively, reveals that the films are polycrystalline in nature. The structural parameters such as crystalline size, strain and dislocation density were determined using X-ray diffractogram of the film. Resistivity measurement by four probe method shows semi conducting nature.
Indium telluride, Thermal evaporation, XRD, Resistivity measurement, Four probe.
P. BHARATHI, A. SUBBARAYAN, Effect of annealing on the structural and electrical properties of thermally evaporated In2Te3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 4, April 2009, pp.334-337 (2009).
Submitted at: March 5, 2009
Accepted at: April 23, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.