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Effect of Aluminum mole fraction and well width on the probability density spreading in GaN/AlGaN quantum well

E. P. SAMUEL1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon [Maharashtra], India

Abstract

Here, we modeled a novel equation to determine full width at half maxima (FWHM) of probability density in GaN/AlGaN quantum well structures in order to investigate the effect of aluminum mole fraction and well width on the quantum confinement. Solutions of the Schrodinger’s time independent equation have been obtained using Quantum Transmitting Boundary Method (QTBM) and transfer matrix method (TMM) has been used to compute the energy and transmission coefficients. The wave function and probability density have been obtained for single quantum well structure of GaN/AlGaN. The results obtained through our probability density spreading model shows excellent agreement with the analytical results. Our versatile approach explores the probability density spread in terms of FWHM with simultaneous variations in well widths and Aluminum mole fraction x. Our model provides useful physical insight to optimize structural parameters for the better quantum confinement in emerging GaN based quantum well laser diodes.

Keywords

Probability density, GaN/AlGaN, Quantum confinement.

Citation

E. P. SAMUEL, D. S. PATIL, Effect of Aluminum mole fraction and well width on the probability density spreading in GaN/AlGaN quantum well, Optoelectronics and Advanced Materials - Rapid Communications, 1, 8, August 2007, pp.394-399 (2007).

Submitted at: June 26, 2007

Accepted at: July 8, 2007