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Effect of Al do ping on crystallization and optical properties of SiGe NP: SiO2 thin films

K. Z. HONG1,* , G. A. CHENG2, X. Q. CHENG2, R. T. ZHENG2

Affiliation

  1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing, China
  2. Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, China

Abstract

SiGe nanoparticles (NPs): SiO2 thin films with and without Al dopi ng were prepared by ions implantation methods. The effect of Al doping on the microstructure and photoluminescence (PL) properties of specimen under different annealing temperature Ta has been investigated. PL, X ray diffraction (XRD) and High resolution transmission electron microscope (HRTEM) examination were carried out. The specimen exhibited a red light emission under 325 nm excitation wavelength at room temperature .T he origin of PL emission was ascribed to quantum confinement effect. The introduce o f Al element led to the decrease of the lowest crystallization temperature from 800 to 500 ℃℃. Furthermore, the reaction of Al induced phase separation process was discussed based on the principles of thermodynamic reaction and the Gibbs free energy..

Keywords

SiGe nanoparticles, Photoluminescence, Ion implantation.

Citation

K. Z. HONG, G. A. CHENG, X. Q. CHENG, R. T. ZHENG, Effect of Al do ping on crystallization and optical properties of SiGe NP: SiO2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.822-825 (2012).

Submitted at: May 2, 2012

Accepted at: Sept. 20, 2012