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N. G. GHEORGHE1, G. A. LUNGU1, R. M. COSTESCU1, D. G. POPESCU1, C. M. TEODORESCU1,*
Clean Si(001) single crystal surfaces are obtained by cycles of long (30 mins.) annealings in ultrahigh vacuum (fairly below 1 x 10-9 mbar). The surface reconstruction is investigated by low energy electron diffraction (LEED). This paper reports, in addition to the well-known p(2 x 1) reconstruction, the first observation of c(4 × 2) at room temperature and also the completely new c(6 x 2) reconstruction. The in situ oxidation of these surfaces was investigated by Auger electron spectroscopy (AES) and by X-ray photoelectron spectroscopy (XPS). It is found that, in similar ultrahigh vacuum conditions (6 x 10-10 mbar), much faster contamination (about 500 times) occurs when the samples are investigated by AES than by XPS, owing mainly to the interaction of the electron beam with the sample surface. Also, much gentler surface bombardment with electrons, such as in LEED, still enhances sample oxidation. Therefore, XPS proves to be a much more convenient technique for non-destructive assessment of the surface composition. When the surface is subjected to the AES investigation, we found that the contamination occurs by forming >Si2C=O complexes based on the Si dimers..
X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), Si(001), Surface reconstructions, Low energy electron diffraction (LEED).
N. G. GHEORGHE, G. A. LUNGU, R. M. COSTESCU, D. G. POPESCU, C. M. TEODORESCU, E nhanced contamination of S i(001) when analyzed by AES with respect to XPS, Optoelectronics and Advanced Materials - Rapid Communications, 5, 5, May 2011, pp.499-504 (2011).
Submitted at: April 19, 2011
Accepted at: May 31, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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