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Determination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well

M. GUNES1,*

Affiliation

  1. Department of Materials Engineering, Faculty of Engineering and Natural Sciences, Adana Science and Technology University, Adana, Turkey

Abstract

The results of the experimental techniques used in the determination of the power and momentum losses from a 2DEG were presented. These are the hot electron photoluminescence (HEPL), and mobility mapping techniques which involve the measurements of PL in synchronization with applied voltage pulse, high field I-V and Hall mobility. In the presence of electric field the carriers are heated, and the high energy-tail of the PL, which is described by Maxwell-Boltzmann distribution, can be used to obtain the temperature of the non-equilibrium carriers. The second technique called mobility mapping is used to verify the temperature of the non-equilibrium carriers..

Keywords

GaAs, AlGaAs, 2DEG, Electron temperature.

Citation

M. GUNES, Determination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well, Optoelectronics and Advanced Materials - Rapid Communications, 8, 5-6, May-June 2014, pp.378-381 (2014).

Submitted at: Sept. 10, 2012

Accepted at: May 15, 2014