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FARAH Z. JASIM1,* , MOHAMMED J. ABDUL-RAZZAK2, HISHAM M. AHMED2
Doping concentration of the distributed Bragg reflectors (DBRs) can strongly affect efficiency of the vertical cavity surface emitting laser (VCSEL) by increasing radiative recombination of carriers. In this paper, Integrating System Engineering Technology Computer Aided Design (ISETCAD) software was used to enhance the performance of GaN-based VCSEL by changing doping concentrations of the DBRs. the effect DBRs doping concentration on the threshold current and differential quantum efficiency in GaN VCSELs has been investigated..
GaN, VCSEL, DBR, Doping concentration.
FARAH Z. JASIM, MOHAMMED J. ABDUL-RAZZAK, HISHAM M. AHMED, Design of GaN-based VCSEL with high performance, Optoelectronics and Advanced Materials - Rapid Communications, 8, 1-2, January-February 2014, pp.7-9 (2014).
Submitted at: Feb. 3, 2013
Accepted at: Jan. 22, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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