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Deposition on thin SiO2 layer by reactive sputtering

I. RADOVIĆ1,2, Y. SERRUYS1, Y. LIMOGE1, M. MILOSAVLJEVIĆ2, N. ROMČEVIĆ3, N. BIBIĆ2,*

Affiliation

  1. CEA/Saclay, Service de Recherches de Métallurgie Physique, 91191 Gif sur Yvette Cedex, France
  2. VINČA Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade, Serbia
  3. Institute of Physics, P.O. Box 68, 11080 Belgrade, Serbia

Abstract

We investigate the experimental possibilities for producing high purity stoichiometric SiO2 thin films by reactive ion beam sputtering. The layers were deposited in a UHV chamber (base pressure 4×10-9 mbar) by 1 keV Ar+ ions for sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6 - 1×10-3 mbar) and of the ion beam current on the target (1.67 - 6.85 mA). The argon partial pressure during ion gun operation was 1×10-3 mbar. The substrates were held at room temperature or at 550 °C, and the films were deposited to 12.5 - 150 nm, at a rate from 0.0018 - 0.035 nm/s. To perform structural characterization we used Rutherford backscattering spectrometry, electron microprobe, X-ray diffraction and Raman spectroscopy. From the results it is clear that reactive ion beam sputtering proved to be efficient for deposition of high quality silica films at 550 ºC, oxygen partial pressure of 2×10-4 mbar (ion beam current on the target from 5 to 5.5 mA) or at a lower deposition rate, ion beam current of 1.67 mA and oxygen partial pressure of 6×10-5 mbar. The aim of these investigations was also to study the consumption of oxygen from the gas cylinder. We found that it is lower for higher deposition rates.

Keywords

SiO2, Thin films, Reactive sputtering, RBS analysis.

Citation

I. RADOVIĆ, Y. SERRUYS, Y. LIMOGE, M. MILOSAVLJEVIĆ, N. ROMČEVIĆ, N. BIBIĆ, Deposition on thin SiO2 layer by reactive sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 1, 5, May 2007, pp.247-251 (2007).

Submitted at: Feb. 4, 2007

Accepted at: April 5, 2007