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M. P. BHOLE1, D. S. PATIL1,*
Non polar Zinc Oxide (ZnO) films were deposited using sol gel deposition method by using zinc acetate dihydrate, ethanol and lactic acid annealed at 300 oC to 450 oC. The ZnO films were characterized by X-ray diffractometre (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM) and Energy dispersive analysis of x-rays (EDAX). The effects of annealing temperature on structural and chemical properties of deposited ZnO films were investigated. From XRD spectra it was revealed that, preferably a-axis oriented crystalline ZnO films were successfully deposited on silicon substrate. The grain size of 39.2 nanometer has been estimated for the film annealed at 400 oC using Scherrer’s formula showing a-axis orientation. The FTIR results showed little change in the peak position and the FWHM of the ZnO stretching bond position with increase in annealing temperature from 300 oC to 450 oC. EDAX clearly show the peaks corresponding to Zn, and O element which confirms the successful growth of ZnO films. This study shows the preferential growth of non polar a-axis oriented nanocrystalline ZnO films and explore its applicability to enhance quantum efficiency for light emitting devices.
Non polar, A-axis, ZnO, Sol gel, XRD, FTIR.
M. P. BHOLE, D. S. PATIL, Deposition of non-polar a-axis nanocrystalline ZnO thin films for light emitting applications, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.672-676 (2007).
Submitted at: Nov. 27, 2007
Accepted at: Nov. 27, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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