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Dependence of photovoltaic properties of CdS/Si Isotype Heterojunction Solar Cells on Deposition Temperature

RAID A. ISMAIL1,* , ABDUL-MAJEED E. AL-SAMARA’I2, MUHANED.R.I.AL-ANI3, OMAR A. A. SULTAN4, SAAD A.TAWFIQd5

Affiliation

  1. Faculty of Education, Hadhramout university, Seiyun,Yemen, School of Applied Science, University of Technology , Iraq
  2. Department of Physics/ College of Education/ Al-Mustansiriyah University-Iraq
  3. Faculty of Science / Thamar University/Yemen
  4. NASSR State Company-Ministry of Industry and Minerals Iraq
  5. Present address: Faculty of Education –Hadhramout university- Seiyun –Yemen

Abstract

In this paper, we present the dependence of some photovoltaic characteristics (VOC, ISC, ηm, τc, FF and Rλ) on deposition temperature (300-500°C) for isotype n-CdS/n-Si heterojunction solar cell made by chemical spray pyrolysis (CSP) technique. Optimum photovoltaic results (VOC = 465 mV, JSC = 42 mA/cm2 , FF = 0.32, and ηm = 6.4%) at AM1 condition were obtained for TS = 450° C without using any of post-deposition annealing and frontal grid contacts. Deterioration in parameters has been observed for TS > 450°C. Spectral responsivity results were strongly depended on deposition temperature. Stability characteristics of theses cells have been investigated.

Keywords

CdS/Si, Heterojunction, Solar Cell.

Citation

RAID A. ISMAIL, ABDUL-MAJEED E. AL-SAMARA’I, MUHANED.R.I.AL-ANI, OMAR A. A. SULTAN, SAAD A.TAWFIQd, Dependence of photovoltaic properties of CdS/Si Isotype Heterojunction Solar Cells on Deposition Temperature, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.232-236 (2008).

Submitted at: March 15, 2008

Accepted at: April 3, 2008