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YIZHENG TANG1,* , QINQIN ZHONG1, HANBING GU1, KAI ZHANG1
The relaxor-based xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3 (PIN-PMN-PT) single crystals have attracted a lot of attention over the last two decades due to their ultrahigh piezoelectric and electromechanical coupling properties. The elastic, dielectric, and piezoelectric properties of relaxor-based single crystals should be determined before they are used to design piezoelectric devices. Researchers can carry out simulations to evaluate the properties of piezoelectric devices after these electromechanical properties are known. To avoid the depolarization, sometimes piezoelectric devices are driven under DC bias field. Therefore, studying the dielectric property of PIN-PMN-PT single crystals under DC bias field is necessary to the design of piezoelectric devices based on them. In this study, the clamped dielectric parameters π11 π and π33 π of [001]c poled PIN-PMN-PT single crystals under DC bias field is experimentally analyzed. Moreover, it is compared with those of lead zirconate titanate (PZT).
Relaxor-based single crystals, PIN-PMN-PT, DC bias, Clamped dielectric property.
YIZHENG TANG, QINQIN ZHONG, HANBING GU, KAI ZHANG, DC bias field effect on clamped dielectric property of [001]c poled xPb(In1/2Nb1/2)O3-(1-x-y) Pb(Mg1/3Nb2/3)O3-yPbTiO3 single crystals, Optoelectronics and Advanced Materials - Rapid Communications, 15, 9-10, September-October 2021, pp.509-512 (2021).
Submitted at: Feb. 28, 2021
Accepted at: Oct. 7, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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