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DC and switching performance of normally-off 4H-SiC TI-VJFET

T. MUNIR1,* , M. FAKHAR-E-ALAM1, W. RAZA2, NAJEEB ABBAS1, M. ATIF3,4

Affiliation

  1. Physics department, GC University Faisalabad. Pakistan
  2. Microelectronics Division/Center of Excellence in Solid State Physics, University of the Punjab, Lahore-54590, Pakistan
  3. Physics and Astronomy Department, College of Science, King Saud University Riyadh 11451, Saudi Arabia
  4. National Institute of Laser and Optronics, Nilore, Islamabad, Pakistan

Abstract

Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature 4H-SiC devices for high power/temperature and switching application. In this paper, DC and switching characteristics of TI-VJFETs has been studied using 2D Sentaurus TCAD with variation of channel width (0.81~0.93 μm), gate-drain capacitance (1~50 pF) and temperature (RT~200⁰C). It was found that increase in channel width forward current increase from 3.99 A to 5.77 A due to decrease in on-resistance with increase in conduction path while blocking voltage decrease from 850 V to 175 V due to decrease in depletion region width. For switching analysis, switching time and energy loss increase with increase in gate –drain capacitance. For temperature increase RT to 200⁰C, turn-on and energy loss (3~ 5 ns & 1.8~3 μJ) increased while turn-off and energy loss (9~6ns & 5.4 ~3.6 μJ) decreased..

Keywords

VJFET, Blocking voltage, Switching analysis, Energy losses.

Citation

T. MUNIR, M. FAKHAR-E-ALAM, W. RAZA, NAJEEB ABBAS, M. ATIF, DC and switching performance of normally-off 4H-SiC TI-VJFET, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1187-1190 (2014).

Submitted at: Sept. 23, 2014

Accepted at: Nov. 13, 2014