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DC, AC and noise characterization of InAlN/GaN high electron mobility transistors on SiC substrate

A. GUEN-BOUAZZA1,* , Z. KOURDI1, B. BOUAZZA1

Affiliation

  1. University of Tlemcen, Faculty of Technology, Unit of Research, Materials and Renewable Energies P.O. Box 230, 13000, Tlemcen, Algeria

Abstract

In this paper DC, AC and noise characteristics of an Indium Aluminum Nitride / Gallium Nitride (InAlN/GaN) high-electron-mobility transistor "HEMT" on SiC substrate are investigated. For this device an ultra-thin aluminum oxide Al2O3 passivation equal to 25nm is selected for high frequency operation. The device selected for investigation has a gate length of 30nm and a 10nm-thick InAlN barrier layer. Our device exhibit a transconductance gm of 740mS/mm, Imax of 590 mA/mm, a cutoff frequency fT of 300 GHz, a maximum oscillation frequency fmax of 710 GHz., a DIBL of 41.66 mV/V, a dissipated power of 14W/mm and 64% Peak PAE. In this work Noise figure (NF) and low-frequency noise (LFN) are also investigated. Our device performances have been characterized over a wide frequency range..

Keywords

InAlN/GaN, HEMTs, Microwave noise, Min Noise figure, HEMT noise analysis, Silvaco TCAD.

Citation

A. GUEN-BOUAZZA, Z. KOURDI, B. BOUAZZA, DC, AC and noise characterization of InAlN/GaN high electron mobility transistors on SiC substrate, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1508-1513 (2015).

Submitted at: Feb. 15, 2015

Accepted at: Oct. 28, 2015