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The laser damage threshold is an important index to describe the laser shock and protection. In order to determine the cleavage and the melting damage threshold of monocrystalline silicon irradiated by a millisecond pulsed laser, a temperature measurement system with a high-precision point thermometer was built. Based on the optical interference theory and on the Mach-Zehnder interference system, a real-time measurement method to determine the stress and the strain of millisecond pulsed lasers interacting with monocrystalline silicon was studied. The research results indicate that the covalent bond fracture damage of the monocrystalline silicon occurs initially under the action of the low-energy density laser; the stress damage dominates and the (100) crystal plane crack is of the "十" type. The crack morphology depends on the surface crystal orientation of the monocrystalline silicon. For a large energy density, the thermal damage effect dominates. Under the action of a single pulse laser with a pulse width of 1.0–3.0 ms, the thermal damage threshold of monocrystalline silicon measures 33.0–57.2J/cm2 . The peak temperature of the center point of the laser increases as the number of pulses increases. The damage threshold of monocrystalline silicon decreases when the temperature and the stress exhibit a cumulative effect.
Millisecond laser, Monocrystalline Silicon, Threshold.
MING GUO, YONG-XIANG ZHANG, LI HONG, NAN LI, JING ZHANGI, JING-YI LI, GUANG-YONG JIN, Damage threshold of monocrystalline silicon irradiated by a millisecond pulsed laser, Optoelectronics and Advanced Materials - Rapid Communications, 15, 1-2, January-February 2021, pp.55-61 (2021).
Submitted at: June 18, 2019
Accepted at: Feb. 12, 2021