Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
B. KINACI1,* , S. ÇÖREKÇİ2, K. KIZILKAYA1, S. ÖZÇELİK1
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented n-GaAs substrate using V80-H solid source Molecular Beam Epitaxy (MBE) system. Atomic Force Microscope (AFM) was used in order to study the surface properties of InGaAs epilayer. The AFM measurement was performed by using an Omicron variable temperature STM/AFM instrument. The electrical parameters such as barrier height (b), ideality factor (n), series resistance (Rs) and interface states (Nss) of Au/InGaAs/n-GaAs SBDs have been calculated by using forward and reverse bias I-V measurements. The energy distribution of interface states of the structure was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (e) into account. In addition, the values of Rs and b were determined by using Cheung’s methods and results have been compared with each other..
InGaAs/GaAs structure, Schottky barrier diodes, Molecular beam epitaxy, Curent-voltage characteristics.
B. KINACI, S. ÇÖREKÇİ, K. KIZILKAYA, S. ÖZÇELİK, Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.327-330 (2012).
Submitted at: Nov. 14, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.