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M. AHMETOGLU (AFRAILOV)1,*
Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n -GaSb / n -GaInAsSb / p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80–300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.
Current flow mechanisms, Type II staggered-lineup, Broken-gap heterojunctions.
M. AHMETOGLU (AFRAILOV), Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes, Optoelectronics and Advanced Materials - Rapid Communications, 3, 6, June 2009, pp.604-607 (2009).
Submitted at: April 29, 2009
Accepted at: June 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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