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Cu clusters onto Si(111)-7×7 after sample annealing at 1170°-1190°C

C. IONESCU1,* , M. A. IONESCU1, I. CIUCA1

Affiliation

  1. Faculty of Science and Materials Engineering, Politechnical University of Bucharest, Romania, EU

Abstract

Cu CVD from Cu(hfac)2 onto Si(111)-7x7 has been studied with STM, XPS, UPS, and HIBS. Here we confirm that features described by STM as clusters on the Si(111)-7x7surface after flashing it at a temperature range 1170°-1190°C were indeed made of Cu as seen by XPS via the “loss-structure”..

Keywords

Si(111)-7×7, Cu(hfac)2, CVD, STM, XPS, UPS, LEED.

Citation

C. IONESCU, M. A. IONESCU, I. CIUCA, Cu clusters onto Si(111)-7×7 after sample annealing at 1170°-1190°C, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.1032-1039 (2013).

Submitted at: Oct. 31, 2013

Accepted at: Nov. 7, 2013