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Herein, we studied the linked physical proprieties between the photoluminescence and the ellipsometric measurements of porous silicon layers. Porous silicon layers were elaborated by the electrochemical etching method, using doped 𝑝-type ⟨100⟩-oriented silicon substrate. The photoluminescence (PL) and the spectroscopic ellipsometry (SE) measurements were used to study the porous silicon layers that obtained from different etching current density and etching time. In order to apply the ellipsometry measurements, we needed to make a model of multi-layer structures that allow us to figure out the thickness and porosity of each layer. Our results showed that at some current density and some time, the porous silicon layer was etched. Additionally, we amusingly noticed a significant improvement in luminescence intensity. The study confirmed a real correlation between photoluminescence and ellipsometric measurements of porous silicon layers..
Porous silicon, Antireflective coating, Electrochemical anodization, Photoluminescence, Spectroscopic ellipsometry.
S. RAHMOUNI, L. ZIGHED, S. CHAGUETMI, M. DAOUDI, M. KHELIFA, M. KARYAOUI, R. CHTOUROU, Correlation between photoluminescence and ellipsometric measurements of porous silicon layers, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.553-558 (2018).
Submitted at: Sept. 5, 2017
Accepted at: Oct. 10, 2018