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IVAN M. SAFONOV1,2,* , OLEKSIY V. SHULIKA1, IGOR A. SUKHOIVANOV3, JOSE A. ANDRADE-LUCIO3
It is introduced a new class of heterostructures (HSs), which have no discontinuities for one of the band edges and, therefore, can be named continuous-band heterostructures (CBHs). The promising properties of CBHs are discussed by consideration of their optical and electrical characteristics. Our estimations show that CBH-based DBRs provide extremely low series resistance in comparison to conventional DBRs even at low level of doping that can be uniform. Low level of doping leads to low absorption. The absence of composition grading and doping profiles can simplify the growth process. Results for some CBHs lattice-matched to GaAs are compared to those for conventional GaAs/AlAs structures.
Band discontinuity, Continuous-band heterosructures, Series resistance, DBR, Free-carrier absorption.
IVAN M. SAFONOV, OLEKSIY V. SHULIKA, IGOR A. SUKHOIVANOV, JOSE A. ANDRADE-LUCIO, Continuous-band heterostructures: a way for the development of low-loss distributed Bragg reflectors for optoelectronic devices, Optoelectronics and Advanced Materials - Rapid Communications, 1, 3, March 2007, pp.96-99 (2007).
Submitted at: Jan. 22, 2007
Accepted at: Feb. 14, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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