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D. PATIDAR1,* , N. S. SAXENA1, KANANBALA SHARMA1, T. P. SHARMA1
Cd1-xZnxS (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) has been prepared by chemical method using cadmium chloride, zinc chloride and H2S. The sintered films of Cd1-xZnxS have been deposited on the glass substrate using the screen-printing method. The crystal structure and composition of Cd1-xZnxS ternary sintered films have been determined by X-ray diffraction patterns. The electrical conductivity of these thin films has been determined using the Keithley Electrometer over the temperature range from room to 413 K. It is observed that the electrical conductivity decreases with increasing Zn concentration. The decrease in conductivity with increase of Zn concentration is attributed to the increase of grain boundary surface area, which is responsible for the decrease of carrier mobility. It is noticed that the lattice structure becomes more and more disordered with the increase of Zn content, which increases the grain boundary scattering. A non-linear increase of electrical conductivity at fixed Zn concentration with the increase of temperature is discussed.
Screen-printing method, Sintering, Electrical conductivity, Grain boundary scattering.
D. PATIDAR, N. S. SAXENA, KANANBALA SHARMA, T. P. SHARMA, Conduction mechanism in CdZnS thick films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 7, July 2007, pp.329-332 (2007).
Submitted at: April 2, 2007
Accepted at: June 26, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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