Abstract
        Detailed analysis of near and far field intensity distribution in Gallium nitride superlattice structure has been carried out 
through the general solutions of wave equation and effective index has been deduced using effective index method to 
explore optical confinement and optical field. To obtain the better optical confinement in Superlattice structure, the physical
and structural parameters like thickness of wells and barriers, wavelength, Aluminum mole composition of barrier and 
temperature have been optimized. The analysis of far field intensity is carried out as a function of wavelength and aluminum 
mole fraction in the temperature range of 300 to 370 K. It is deduced from our analysis that the Aluminum mole fraction in 
the barrier region strongly influences near field, far field divergence and the optical confinement.
        Keywords
        Superlattice, GaN, Nanostructures, Optical field.
        Citation
        K. TALELE, D. S. PATIL, Computation of optical field intensity in nitride based  superlattice nanostructures for temperature range  (300-370 K), Optoelectronics and Advanced Materials - Rapid Communications, 2, 7, July 2008, pp.418-423 (2008).
        Submitted at: June 15, 2008
 
        Accepted at: July 8, 2008