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Computation of optical field intensity in nitride based superlattice nanostructures for temperature range (300-370 K)

K. TALELE1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon [Maharashtra], India

Abstract

Detailed analysis of near and far field intensity distribution in Gallium nitride superlattice structure has been carried out through the general solutions of wave equation and effective index has been deduced using effective index method to explore optical confinement and optical field. To obtain the better optical confinement in Superlattice structure, the physical and structural parameters like thickness of wells and barriers, wavelength, Aluminum mole composition of barrier and temperature have been optimized. The analysis of far field intensity is carried out as a function of wavelength and aluminum mole fraction in the temperature range of 300 to 370 K. It is deduced from our analysis that the Aluminum mole fraction in the barrier region strongly influences near field, far field divergence and the optical confinement.

Keywords

Superlattice, GaN, Nanostructures, Optical field.

Citation

K. TALELE, D. S. PATIL, Computation of optical field intensity in nitride based superlattice nanostructures for temperature range (300-370 K), Optoelectronics and Advanced Materials - Rapid Communications, 2, 7, July 2008, pp.418-423 (2008).

Submitted at: June 15, 2008

Accepted at: July 8, 2008