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Compositional dependence of physical parameters in Ge17Se83-xSbx (x = 0, 3, 6, 9, 12, 15) glassy semiconductors

PARIKSHIT SHARMA1, V. S. RANGRA1, S. C. KATYAL2, PANKAJ SHARMA2,*

Affiliation

  1. Department of Physics, H. P. University, Summer Hill Shimla (171005) India
  2. Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. (173215) India

Abstract

Glasses of x x Ge Se Sb 17 83− (x = 0, 3, 6, 9, 12, 15) have been synthesized by melt quenching technique. Various physical parameters viz. coordination number, lone pair of electrons, number of constraints, bond energy, heat of atomization, glass transition temperature and mean bond energy, for glassy alloys have been calculated. It is inferred that on increasing the Sb content average number of constraints, average heat of atomization, mean bond energy and glass transition temperature increases whereas number of lone pair of electrons calculated here decreases. The increase in glass transition temperature has been explained on the basis of accumulation of Sb atoms in Se-chain.

Keywords

Ge-Se-Sb, Glass, Semiconductor, Melt quenching.

Citation

PARIKSHIT SHARMA, V. S. RANGRA, S. C. KATYAL, PANKAJ SHARMA, Compositional dependence of physical parameters in Ge17Se83-xSbx (x = 0, 3, 6, 9, 12, 15) glassy semiconductors, Optoelectronics and Advanced Materials - Rapid Communications, 1, 8, August 2007, pp.363-367 (2007).

Submitted at: June 26, 2007

Accepted at: July 8, 2007