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Comparison of structure and luminescence b etween β FeSi 2 /Si (100) and β FeSi 2 /Si (111) heterojunctions prepared by pulsed laser deposition

S. C. XU1, S. B. GAO1, M . LIU1, C. YANG1, C. S. CHEN1, S. Z. JIANG1, X. G. GAO1, Z. C. SUN1, B Y. MAN1,*

Affiliation

  1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China

Abstract

The β FeSi2 /Si (100) and β FeSi2 /Si (111) heterojunctions were prepared by growing β FeSi2 thin films on Si (100) and Si (111) substrates respectively with pulsed laser deposition (PLD) method.Crystalline structures of the films were measured by X ray d iffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The β FeSi2 films on Si (100) had a more orderly structure than those on Si (111). Surface properties and the eleme ntal composition in the depth direction of β FeSi 2 /Si heterojunctions were characterized with s canning e lectron m icroscopy (SEM) and X ray photoelectron spectroscopy XPS )), respectively. For both kinds of the heterojunctions, a clear interface between the films and substrates was obtained. The distinct light emitting was achieved on β FeSi 2 /Si heterojunctions at 30 K, and the β FeSi 2 /Si (100) heterojunction performed a better photoluminescence than β FeSi 2 /Si (111)heterojunction..

Keywords

Pulsed laser deposition,Photoluminescence β FeSi2.

Citation

S. C. XU, S. B. GAO, M . LIU, C. YANG, C. S. CHEN, S. Z. JIANG, X. G. GAO, Z. C. SUN, B Y. MAN, Comparison of structure and luminescence b etween β FeSi 2 /Si (100) and β FeSi 2 /Si (111) heterojunctions prepared by pulsed laser deposition, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.68-72 (2012).

Submitted at: Nov. 22, 2011

Accepted at: Feb. 20, 2012