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N. ZAINAL1,* , Z. HASSAN1, H. ABU HASSAN1, M. R. HASHIM1
The emission efficiency of single and multiple quantum wells of InGaN based LED was compared by using standard industrial software, SILVACO/ATLAS. We found that the performance of multiple quantum LED decreases as the number of In0.13Ga0.87N quantum wells is increases. The simulation results suggest that the inhomogeneous distribution of carriers, particularly holes in the entire quantum wells (at higher number of In0.13Ga0.87N quantum well) is responsible for the reduction of the LED performance.
Light emitting diode, III-V nitride, Conduction band, Valance band, Quantum wells, Simulation method.
N. ZAINAL, Z. HASSAN, H. ABU HASSAN, M. R. HASHIM, Comparative study of single and multiple quantum wells of In0.13Ga0.87N based LED by simulation method, Optoelectronics and Advanced Materials - Rapid Communications, 1, 8, August 2007, pp.404-407 (2007).
Submitted at: March 31, 2007
Accepted at: July 8, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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